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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FY5ACJ-03F FY5ACJ-03F HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FY5ACJ-03F OUTLINE DRAWING Dimensions in mm 6.0 4.4 5.0 1.8 MAX. 0.4 1.27 SOURCE GATE DRAIN G 4V DRIVE G VDSS ................................................................. 30V G rDS (ON) (MAX) ............................................ 27m G ID ........................................................................ 5A SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Tc = 25C) Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 20 5 35 5 1.5 6.0 1.6 -55~+150 -55~+150 0.07 Unit V V A A A A A W C C g Sep. 2001 MITSUBISHI Nch POWER MOSFET FY5ACJ-03F HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 2.5A, VGS = 4V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Test conditions Limits Min. 30 20 -- -- 1.0 -- -- -- -- -- -- -- -- VDD = 15V, ID = 2.5A, VGS = 10V, RGEN = RGS = 50 -- -- -- -- -- -- Typ. -- -- -- -- 1.5 21 34 0.105 10 600 200 90 10 15 50 20 0.75 -- 40 Max. -- -- 10 0.1 2.0 27 48 0.135 -- -- -- -- -- -- -- -- 1.10 78.1 -- Unit V V A mA V m m V S pF pF pF ns ns ns ns V C/W ns V (BR)DSS Drain-source breakdown voltage V (BR)GSS Gate-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) | yfs | Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Tum-on delay time Rise time Tum-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time IS = 1.5A, VGS = 0V Channel to air IS = 1.5A, dis/dt = -50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 tw = 10s 100s 1ms 1.6 101 7 5 3 2 1.2 100 7 5 3 2 7 5 3 TC = 25C Single Pulse 0.8 10ms 100ms 0.4 10-1 DC 23 5 7 100 23 5 7 101 23 57 0 0 50 100 150 200 CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 50 Tc = 25C Pulse Test VGS = 10V,8V 6V 5V DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 10V,8V,6V,5V 4V Tc = 25C Pulse Test DRAIN CURRENT ID (A) 40 4V DRAIN CURRENT ID (A) 16 30 12 3V 20 3V 8 10 PD = 1.6W 4 PD = 1.6W 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY5ACJ-03F HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tc = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50 1.6 40 VGS = 4V 1.2 30 10V 0.8 ID = 15A 2A 5A 10A 20 0.4 10 Tc = 25C Pulse Test 0 0 2 4 6 8 10 0 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 102 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 101 7 5 3 2 TC = 25C,75C,125C 12 Tc = 25C VDS = 10V Pulse Test 8 100 7 5 3 2 VDS =10V Pulse Test 4 0 0 2 4 6 8 10 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 SWITCHING CHARACTERISTICS (TYPICAL) 2 103 CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 Coss Ciss 102 SWITCHING TIME (ns) 7 5 3 2 td(on) td(off) tf 101 7 5 3 2 tr Tch = 25C VGS = 10V VDD = 15V RGEN = RGS = 50 2 3 5 7 100 2 3 5 7 101 102 7 5 3 Tch = 25C VGS = 0V f = 1MHZ Crss 10-1 2 3 2 5 7 100 23 5 7 101 23 100 10-1 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY5ACJ-03F HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 SOURCE CURRENT IS (A) TC = 25C 75C 10 8 VDS = 15V 20V 25V 16 6 12 125C 4 8 VGS = 0V Pulse Test 2 Tch = 25C ID =5A 4 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 3.2 2.4 100 7 5 3 2 VGS = 10V ID = 5A Pulse Test 1.6 VDS = 10V ID = 1mA 0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 D=1.0 =0.5 =0.2 =0.1 =0.05 =0.02 PDM =0.01 Single Pulse tw T D= tw T 1.2 101 7 5 3 2 1.0 VGS = 0V ID = 1mA 0.8 100 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5710-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (C) Sep. 2001 |
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